IXYS Very High Voltage Series 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
Features
"Free" intrinsic body diodeHigh power densityHigh frequency operationLow conduction lossesMOS gate turn on for drive simplicity
Applications
Switched-mode and resonant-mode power suppliesUninterruptible Power Supplies (UPS)Laser and X-ray generatorsCapacitor discharge circuits
