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SQJQ466E-T1_GE3

SQJQ466E-T1_GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SQJQ466E-T1_GE3
Manufacturer
Vishay
Description
MOSFET N-CH 60V 200A POWERPAK8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SQJQ466E-T1_GE3.pdf
Total:$1.46882
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Vishay SQJQ466E-T1_GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 63669 pcs

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(In US Dollars)
1pcs
$1.46882

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Part Number
SQJQ466E-T1_GE3
Manufacturer
Vishay
Description
MOSFET N-CH 60V 200A POWERPAK8
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10210pF @ 25V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 8 x 8
Package / Case
8-PowerTDFN

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