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TSM061NA03CR RLG

TSM061NA03CR RLG Image is for reference, Plz contact us to get the real picture
Part Number
TSM061NA03CR RLG
Manufacturer
Taiwan Semiconductor
Description
MOSFET N-CH 30V 88A 8PDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
TSM061NA03CR RLG.pdf
Total:$0.27034
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Taiwan Semiconductor TSM061NA03CR RLG is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 345938 pcs

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1pcs
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Part Number
TSM061NA03CR RLG
Manufacturer
Taiwan Semiconductor
Description
MOSFET N-CH 30V 88A 8PDFN
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.1 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1133pF @ 15V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5x6)
Package / Case
8-PowerTDFN

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