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SCT2H12NYTB

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Part Number
SCT2H12NYTB
Manufacturer
ROHM Semiconductor
Description
1700V 1.2 OHM 4A SIC FET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Total:$3.68150
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ROHM Semiconductor SCT2H12NYTB is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 25402 pcs

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(In US Dollars)
1pcs
$3.68150

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Part Number
SCT2H12NYTB
Manufacturer
ROHM Semiconductor
Description
1700V 1.2 OHM 4A SIC FET
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
1.5 Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id
4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 18V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
184pF @ 800V
FET Feature
-
Power Dissipation (Max)
44W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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