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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SISH617DN-T1-GE3

SISH617DN-T1-GE3

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Part Number
SISH617DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 30V POWERPAK 1212-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SISH617DN-T1-GE3.pdf
Total:$0.41189
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Vishay SISH617DN-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 227053 pcs

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(In US Dollars)		 1pcs
$0.41189

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Part Number
SISH617DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CHAN 30V POWERPAK 1212-
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
13.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.3 mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 15V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH

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