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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single BSC019N06NSATMA1

BSC019N06NSATMA1

BSC019N06NSATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
BSC019N06NSATMA1
Manufacturer
Infineon Technologies
Description
DIFFERENTIATED MOSFETS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSC019N06NSATMA1.pdf
Total:$1.14551
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Infineon Technologies BSC019N06NSATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 81641 pcs

Refrence Price
(In US Dollars)		 1pcs
$1.14551

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Part Number
BSC019N06NSATMA1
Manufacturer
Infineon Technologies
Description
DIFFERENTIATED MOSFETS
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.95 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.3V @ 74µA
Gate Charge (Qg) (Max) @ Vgs
77nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5.25nF @ 30V
FET Feature
-
Power Dissipation (Max)
136W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8 FL
Package / Case
8-PowerTDFN

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