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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

IPI086N10N3GXKSA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPI086N10N3GXKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 80A TO262-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPI086N10N3GXKSA1.pdf
Total:$1.76000
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Infineon Technologies IPI086N10N3GXKSA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 53136 pcs

Refrence Price
(In US Dollars)		 1pcs
$1.76000

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Part Number
IPI086N10N3GXKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 80A TO262-3
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.6 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980pF @ 50V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA

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