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HGTG10N120BND

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Part Number
HGTG10N120BND
Manufacturer
ON Semiconductor
Description
IGBT 1200V 35A 298W TO247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
HGTG10N120BND.pdf
Total:$3.95000
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ON Semiconductor HGTG10N120BND is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 23675 pcs

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(In US Dollars)
1pcs
$3.95000

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Part Number
HGTG10N120BND
Manufacturer
ON Semiconductor
Description
IGBT 1200V 35A 298W TO247
Part Status
Not For New Designs
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
35A
Current - Collector Pulsed (Icm)
80A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298W
Switching Energy
850µJ (on), 800µJ (off)
Input Type
Standard
Gate Charge
100nC
Td (on/off) @ 25°C
23ns/165ns
Test Condition
960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr)
70ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247

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