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IGLD60R070D1AUMA1

IGLD60R070D1AUMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IGLD60R070D1AUMA1
Manufacturer
Infineon Technologies
Description
IC GAN FET 600V 60A 8SON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IGLD60R070D1AUMA1.pdf
Total:$15.94978
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Infineon Technologies IGLD60R070D1AUMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 5863 pcs

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(In US Dollars)
1pcs
$15.94978

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Part Number
IGLD60R070D1AUMA1
Manufacturer
Infineon Technologies
Description
IC GAN FET 600V 60A 8SON
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 400V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-LSON-8-1
Package / Case
8-LDFN Exposed Pad

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