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SPB18P06PGATMA1

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Part Number
SPB18P06PGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 60V 18.7A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SPB18P06PGATMA1.pdf
Total:$0.57981
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Infineon Technologies SPB18P06PGATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 161296 pcs

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(In US Dollars)
1pcs
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Part Number
SPB18P06PGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 60V 18.7A TO-263
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130 mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 25V
FET Feature
-
Power Dissipation (Max)
81.1W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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