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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single TPN14006NH,L1Q

TPN14006NH,L1Q

TPN14006NH,L1Q Image is for reference, Plz contact us to get the real picture
Part Number
TPN14006NH,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N CH 60V 13A 8TSON-ADV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Total:$0.32200
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Toshiba Semiconductor and Storage TPN14006NH,L1Q is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 290438 pcs

Refrence Price
(In US Dollars)		 1pcs
$0.32200

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Part Number
TPN14006NH,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N CH 60V 13A 8TSON-ADV
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6.5V, 10V
Rds On (Max) @ Id, Vgs
14 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 30V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-PowerVDFN

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