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H7N1002LS-E

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Part Number
H7N1002LS-E
Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 100V LDPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
H7N1002LS-E.pdf
Total:$0.00000
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Renesas Electronics America H7N1002LS-E is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 6390 pcs

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Part Number
H7N1002LS-E
Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 100V LDPAK
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
75A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10 mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
155nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9700pF @ 10V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-LDPAK
Package / Case
SC-83

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