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TSM60NB190CM2 RNG

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Part Number
TSM60NB190CM2 RNG
Manufacturer
Taiwan Semiconductor
Description
MOSFET N-CH 600V 18A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
TSM60NB190CM2 RNG.pdf
Total:$1.49010
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Taiwan Semiconductor TSM60NB190CM2 RNG is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 62761 pcs

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(In US Dollars)		 1pcs
$1.49010

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Part Number
TSM60NB190CM2 RNG
Manufacturer
Taiwan Semiconductor
Description
MOSFET N-CH 600V 18A TO263
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1273pF @ 100V
FET Feature
-
Power Dissipation (Max)
150.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D²Pak)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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