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SI3477DV-T1-GE3

SI3477DV-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI3477DV-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CH 12V 8A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI3477DV-T1-GE3.pdf
Total:$0.32205
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Vishay SI3477DV-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 290392 pcs

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1pcs
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Part Number
SI3477DV-T1-GE3
Manufacturer
Vishay
Description
MOSFET P-CH 12V 8A 6-TSOP
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
17.5 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90nC @ 10V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 6V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 4.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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