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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPB081N06L3GATMA1

IPB081N06L3GATMA1

IPB081N06L3GATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPB081N06L3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 50A TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPB081N06L3GATMA1.pdf
Total:$0.74333
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Infineon Technologies IPB081N06L3GATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 125813 pcs

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(In US Dollars)		 1pcs
$0.74333

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Part Number
IPB081N06L3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 50A TO263-3
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.1 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs
29nC @ 4.5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4900pF @ 30V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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