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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
BSZ120P03NS3EGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 30V 40A TSDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSZ120P03NS3EGATMA1.pdf
Total:$0.26923
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Infineon Technologies BSZ120P03NS3EGATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 347366 pcs

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(In US Dollars)		 1pcs
$0.26923

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Part Number
BSZ120P03NS3EGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 30V 40A TSDSON-8
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
12 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3360pF @ 15V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8
Package / Case
8-PowerTDFN

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