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SI1926DL-T1-GE3

SI1926DL-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SI1926DL-T1-GE3
Manufacturer
Vishay
Description
MOSFET 2N-CH 60V 0.37A SOT363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SI1926DL-T1-GE3.pdf
Total:$0.16245
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Vishay SI1926DL-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 575693 pcs

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Part Number
SI1926DL-T1-GE3
Manufacturer
Vishay
Description
MOSFET 2N-CH 60V 0.37A SOT363
Part Status
Active
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
370mA
Rds On (Max) @ Id, Vgs
1.4 Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
18.5pF @ 30V
Power - Max
510mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6 (SOT-363)

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