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TC58BYG2S0HBAI4

TC58BYG2S0HBAI4 Image is for reference, Plz contact us to get the real picture
Part Number
TC58BYG2S0HBAI4
Manufacturer
Toshiba Memory America, Inc.
Description
4GB SLC BENAND 24NM BGA 9X11 EE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Total:$5.34000
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Toshiba Memory America, Inc. TC58BYG2S0HBAI4 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 19471 pcs

Refrence Price
(In US Dollars)
1pcs
$5.34000

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Part Number
TC58BYG2S0HBAI4
Manufacturer
Toshiba Memory America, Inc.
Description
4GB SLC BENAND 24NM BGA 9X11 EE
Part Status
Active
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND (SLC)
Memory Size
4G (512M x 8)
Clock Frequency
-
Write Cycle Time - Word, Page
25ns
Access Time
25ns
Memory Interface
Parallel
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
63-VFBGA
Supplier Device Package
63-TFBGA (9x11)

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