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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SIJ186DP-T1-GE3

SIJ186DP-T1-GE3

SIJ186DP-T1-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SIJ186DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 60V PPAK SO-8L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIJ186DP-T1-GE3.pdf
Total:$0.54120
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Vishay SIJ186DP-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 172802 pcs

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(In US Dollars)		 1pcs
$0.54120

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Part Number
SIJ186DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 60V PPAK SO-8L
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 30V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8

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