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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPD80R1K0CEBTMA1

IPD80R1K0CEBTMA1

IPD80R1K0CEBTMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPD80R1K0CEBTMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 800V 5.7A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD80R1K0CEBTMA1.pdf
Total:$0.00000
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Infineon Technologies IPD80R1K0CEBTMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 6553 pcs

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(In US Dollars)		 1pcs
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Part Number
IPD80R1K0CEBTMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 800V 5.7A TO252-3
Part Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
785pF @ 100V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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