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IGT60R070D1ATMA1

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Part Number
IGT60R070D1ATMA1
Manufacturer
Infineon Technologies
Description
IC GAN FET 600V 60A 8HSOF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IGT60R070D1ATMA1.pdf
Total:$16.19898
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Infineon Technologies IGT60R070D1ATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 5772 pcs

Refrence Price
(In US Dollars)
1pcs
$16.19898

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Part Number
IGT60R070D1ATMA1
Manufacturer
Infineon Technologies
Description
IC GAN FET 600V 60A 8HSOF
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 400V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN

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