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1N5406GHA0G

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Part Number
1N5406GHA0G
Manufacturer
Taiwan Semiconductor
Description
DIODE GEN PURP 600V 3A DO201AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
1N5406GHA0G.pdf
Total:$0.07440
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Taiwan Semiconductor 1N5406GHA0G is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 1257008 pcs

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Part Number
1N5406GHA0G
Manufacturer
Taiwan Semiconductor
Description
DIODE GEN PURP 600V 3A DO201AD
Part Status
Active
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
600V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1V @ 3A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
5µA @ 600V
Capacitance @ Vr, F
25pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Supplier Device Package
DO-201AD
Operating Temperature - Junction
-55°C ~ 150°C

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