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IPG20N06S4L11ATMA1

IPG20N06S4L11ATMA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPG20N06S4L11ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPG20N06S4L11ATMA1.pdf
Total:$0.92378
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Infineon Technologies IPG20N06S4L11ATMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 101237 pcs

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(In US Dollars)
1pcs
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Part Number
IPG20N06S4L11ATMA1
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 8TDSON
Part Status
Active
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
20A
Rds On (Max) @ Id, Vgs
11.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs
53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
4020pF @ 25V
Power - Max
65W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TDSON-8-4

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