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SIHU3N50D-GE3

SIHU3N50D-GE3 Image is for reference, Plz contact us to get the real picture
Part Number
SIHU3N50D-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 500V 3A TO251 IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIHU3N50D-GE3.pdf
Total:$0.39324
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Vishay SIHU3N50D-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 237821 pcs

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(In US Dollars)
1pcs
$0.39324

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Part Number
SIHU3N50D-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 500V 3A TO251 IPAK
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.2 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
175pF @ 100V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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