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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single IPP65R190E6XKSA1

IPP65R190E6XKSA1

IPP65R190E6XKSA1 Image is for reference, Plz contact us to get the real picture
Part Number
IPP65R190E6XKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 20.2A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPP65R190E6XKSA1.pdf
Total:$3.50000
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Infineon Technologies IPP65R190E6XKSA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 26720 pcs

Refrence Price
(In US Dollars)		 1pcs
$3.50000

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Part Number
IPP65R190E6XKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 20.2A TO220
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs
73nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1620pF @ 100V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3

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