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IPD068P03L3GBTMA1

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Part Number
IPD068P03L3GBTMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 30V 70A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPD068P03L3GBTMA1.pdf
Total:$0.00000
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Infineon Technologies IPD068P03L3GBTMA1 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 3740 pcs

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Part Number
IPD068P03L3GBTMA1
Manufacturer
Infineon Technologies
Description
MOSFET P-CH 30V 70A TO252-3
Part Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8 mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
91nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7720pF @ 15V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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