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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SISA88DN-T1-GE3

SISA88DN-T1-GE3

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Part Number
SISA88DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 1212-8 PPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SISA88DN-T1-GE3.pdf
Total:$0.20758
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Vishay SISA88DN-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 450531 pcs

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(In US Dollars)		 1pcs
$0.20758

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Part Number
SISA88DN-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 30V 1212-8 PPAK
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
16.2A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.5nC @ 10V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
985pF @ 15V
FET Feature
-
Power Dissipation (Max)
3.2W (Ta), 19.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8

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