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EDB1316BDBH-1DAAT-F-R TR

EDB1316BDBH-1DAAT-F-R TR Image is for reference, Plz contact us to get the real picture
Part Number
EDB1316BDBH-1DAAT-F-R TR
Manufacturer
Micron Technology
Description
IC DRAM 1G PARALLEL 134VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EDB1316BDBH-1DAAT-F-R TR.pdf
Total:$0.00000
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Micron Technology EDB1316BDBH-1DAAT-F-R TR is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 6108 pcs

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(In US Dollars)
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Part Number
EDB1316BDBH-1DAAT-F-R TR
Manufacturer
Micron Technology
Description
IC DRAM 1G PARALLEL 134VFBGA
Part Status
Active
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - Mobile LPDDR2
Memory Size
1Gb (64M x 16)
Clock Frequency
533MHz
Write Cycle Time - Word, Page
-
Access Time
-
Memory Interface
Parallel
Voltage - Supply
1.14V ~ 1.95V
Operating Temperature
-40°C ~ 105°C (TC)
Mounting Type
Surface Mount
Package / Case
134-VFBGA
Supplier Device Package
134-VFBGA (10x11.5)

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