Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. The FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.
Features
JEDEC qualified GaN technologyDynamic R
DS(on)eff production testedRobust design, defined by
Intrinsic lifetime testsWide gate safety marginTransient over-voltage capabilityVery low Q
RRReduced crossover lossRoHS compliant and Halogen-free packaging
Applications
DatacomBroad industrial
