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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single SIA810DJ-T1-GE3

SIA810DJ-T1-GE3

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Part Number
SIA810DJ-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 20V 4.5A SC70-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SIA810DJ-T1-GE3.pdf
Total:$0.44280
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Vishay SIA810DJ-T1-GE3 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 211203 pcs

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(In US Dollars)		 1pcs
$0.44280

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Part Number
SIA810DJ-T1-GE3
Manufacturer
Vishay
Description
MOSFET N-CH 20V 4.5A SC70-6
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
53 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.5nC @ 8V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 10V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.9W (Ta), 6.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6 Dual
Package / Case
PowerPAK® SC-70-6 Dual

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