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ES3DBHM4G

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Part Number
ES3DBHM4G
Manufacturer
Taiwan Semiconductor
Description
DIODE GEN PURP 200V 3A DO214AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
ES3DBHM4G.pdf
Total:$0.18649
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Taiwan Semiconductor ES3DBHM4G is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 501481 pcs

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1pcs
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Part Number
ES3DBHM4G
Manufacturer
Taiwan Semiconductor
Description
DIODE GEN PURP 200V 3A DO214AA
Part Status
Active
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
200V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1V @ 3A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Current - Reverse Leakage @ Vr
10µA @ 200V
Capacitance @ Vr, F
46pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Supplier Device Package
DO-214AA (SMB)
Operating Temperature - Junction
-55°C ~ 150°C

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