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GA10JT12-263

GA10JT12-263 Image is for reference, Plz contact us to get the real picture
Part Number
GA10JT12-263
Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 25A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GA10JT12-263.pdf
Total:$20.15000
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GeneSiC Semiconductor GA10JT12-263 is available at ICSEEK. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please contact us click the Online Chat or send a quote to us.

In Stock 4640 pcs

Refrence Price
(In US Dollars)
1pcs
$20.15000

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Part Number
GA10JT12-263
Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 1200V 25A
Part Status
Active
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
120 mOhm @ 10A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1403pF @ 800V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
-
Package / Case
-

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